SI4825DY vishay siliconix document number: 71291 s-50129?rev. b, 24-jan-05 www.vishay.com 1 p-channel 30-v (d-s) mosfet product summary v ds (v) r ds(on) ( ) i d (a) ? 30 0.014 @ v gs = ? 10 v ? 11.5 ? 30 0.022 @ v gs = ? 4.5 v ? 9.2 sd s d sd g d so-8 5 6 7 8 top view 2 3 4 1 ordering information: SI4825DY SI4825DY-t1 (with t ape and reel) SI4825DY?e3 (lead (pb)-free) SI4825DY-t1?e3 (lead (pb)-free) with tape and reel) s g d p-channel mosfet absolute maximum ratings (t a = 25 c unless otherwise noted) parameter symbol 10 secs steady state unit drain-source voltage v ds ? 30 v gate-source voltage v gs 25 v continuous drain current (t j = 150 c) a t a = 25 c i d ? 11.5 ? 8.1 c on ti nuous d ra i n c urren t (t j = 150 c) a t a = 70 c i d ? 9.2 ? 6.5 a pulsed drain current i dm ? 50 a continuous source current (diode conduction) a i s ? 2.5 ? 1.3 maximum power dissipation a t a = 25 c p d 3.0 1.5 w maximum power dissipation a t a = 70 c p d 1.9 0.9 w operating junction and storage temperature range t j , t stg ? 55 to 150 c thermal resistance ratings parameter symbol typical maximum unit mi j ti tabit a t 10 sec r 32 42 maximum junction-to-ambient a steady state r thja 68 85 c/w maximum junction-to-foot (drain) steady state r thjf 15 18 c/w notes a. surface mounted on 1? x 1? fr4 board.
SI4825DY vishay siliconix www.vishay.com 2 document number: 71291 s-50129?rev. b, 24-jan-05 specifications (t j = 25 c unless otherwise noted) parameter symbol test condition min typ max unit static gate threshold voltage v gs(th) v ds = v gs , i d = ? 250 a ? 1.0 ? 3.0 v gate-body leakage i gss v ds = 0 v, v gs = 25 v 100 na zero gate voltage drain current i dss v ds = ? 30 v, v gs = 0 v ? 1 a zero gate voltage drain current i dss v ds = ? 30 v, v gs = 0 v, t j = 55 c ? 5 a on-state drain current a i d(on) v ds ? 5 v, v gs = ? 10 v ? 50 a drain source on state resistance a r ds( ) v gs = ? 10 v, i d = ? 11.5 a 0.012 0.014 drain-source on-state resistance a r ds(on) v gs = ? 4.5 v, i d = ? 9.2 a 0.018 0.022 forward transconductance a g fs v ds = ? 15 v, i d = ? 11.5 a 28 s diode forward voltage a v sd i s = ? 2.5 a, v gs = 0 v ? 0.8 ? 1.2 v dynamic b total gate charge q g 55 71 gate-source charge q gs v ds = ? 15 v, v gs = ? 10 v, i d = ? 11.5 a 15.5 nc gate-drain charge q gd 7.5 turn-on delay time t d(on) 15 25 rise time t r v dd = ? 15 v, r l = 15 13 20 turn-off delay time t d(off) v dd = ? 15 v , r l = 15 i d ? 1 a, v gen = ? 10 v, r g = 6 97 150 ns fall time t f 51 75 source-drain reverse recovery time t rr i f = ? 2.5 a, di/dt = 100 a/ s 45 80 notes a. pulse test; pulse width 300 s, duty cycle 2%. b. guaranteed by design, not subject to production testing. stresses beyond those listed under ?absolute maximum ratings? may cause permanent damage to the device. these are stress ratin gs only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. exposure to absolute maximum rating conditions for extended periods may affect device reliability. typical characteristics (25 c unless noted) 0 10 20 30 40 50 012345 0 10 20 30 40 50 012345 v gs = 10 thru 5 v t c = 125 c ? 55 c 25 c output characteristics transfer characteristics v ds ? drain-to-source voltage (v) ? drain current (a) i d v gs ? gate-to-source voltage (v) ? drain current (a) i d 4 v 3 v
SI4825DY vishay siliconix document number: 71291 s-50129?rev. b, 24-jan-05 www.vishay.com 3 typical characteristics (25 c unless noted) ? on-resistance ( r ds(on) ) 0 1000 2000 3000 4000 5000 0 6 12 18 24 30 0.6 0.8 1.0 1.2 1.4 1.6 ? 50 ? 25 0 25 50 75 100 125 150 0 2 4 6 8 10 0 1224364860 0.000 0.005 0.010 0.015 0.020 0.025 0 1020304050 v ds ? drain-to-source voltage (v) c rss c oss c iss v ds = 15 v i d = 11.5 a i d ? drain current (a) v gs = 10 v i d = 11.5 a v gs = 10 v gate charge on-resistance vs. drain current ? gate-to-source voltage (v) q g ? total gate charge (nc) c ? capacitance (pf) v gs capacitance on-resistance vs. junction t emperature t j ? junction temperature ( c) 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0.00 0.01 0.02 0.03 0.04 0.05 0246810 t j = 25 c i d = 11.5 a 50 10 1 source-drain diode forward v oltage on-resistance vs. gate-to-source voltage ? on-resistance ( r ds(on) ) v sd ? source-to-drain voltage (v) v gs ? gate-to-source voltage (v) ? source current (a) i s v gs = 4.5 v t j = 150 c r ds(on) ? on-resiistance (normalized)
SI4825DY vishay siliconix www.vishay.com 4 document number: 71291 s-50129?rev. b, 24-jan-05 typical characteristics (25 c unless noted) 0 30 50 10 29 power (w) single pulse power, junction-to-ambient time (sec) 40 10 ? 3 10 ? 2 1 10 600 10 ? 1 10 ? 4 100 ? 0.4 ? 0.2 0.0 0.2 0.4 0.6 0.8 1.0 ? 50 ? 25 0 25 50 75 100 125 150 i d = 250 a 2 1 0.1 0.01 0.2 0.1 0.05 0.02 single pulse duty cycle = 0.5 threshold v oltage variance (v) v gs(th) t j ? temperature ( c) normalized thermal transient impedance, junction-to-ambient square wave pulse duration (sec) normalized effective transient thermal impedance 1. duty cycle, d = 2. per unit base = r thja = 68 c/w 3. t jm ? t a = p dm z thja (t) t 1 t 2 t 1 t 2 notes: 4. surface mounted p dm 10 ? 3 10 ? 2 110 10 ? 1 10 ? 4 2 1 0.1 0.01 0.2 0.1 0.05 0.02 single pulse duty cycle = 0.5 normalized thermal transient impedance, junction-to-foot square wave pulse duration (sec) normalized effective transient thermal impedance 1 600 100 10 ? 1 10 ? 2 10 vishay siliconix maintains worldw ide manufacturing c apability. pr oducts may be manufactured at on e of several qualified locati ons. reliability data for silicon technology and package reliability repr esent a composite of all qualified locations. for re lated documents such as package/tape drawings, par t marking, and reliability data, see http://www.vishay.com/ppg?71291 .
legal disclaimer notice vishay document number: 91000 www.vishay.com revision: 08-apr-05 1 notice specifications of the products displayed herein are subjec t to change without notice. vishay intertechnology, inc., or anyone on its behalf, assume s no responsibility or liability fo r any errors or inaccuracies. information contained herein is intended to provide a product description only. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. except as provided in vishay's terms and conditions of sale for such products, vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and /or use of vishay products including liab ility or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyrigh t, or other intellectual property right. the products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify vishay for any damages resulting from such improper use or sale.
|
